TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Voltage Rating (DC) | -100 V |
Current Rating | -3.10 A |
Case/Package | TO-252 |
Polarity | P-Channel |
Power Dissipation | 25.0 W |
Drain to Source Voltage (Vds) | -100 V |
Breakdown Voltage (Drain to Source) | -100 V |
Continuous Drain Current (Ids) | -3.10 A |
Rise Time | 27.0 ns |
TYPE | DESCRIPTION |
---|
Packaging | Tube |
The IRFR9110PBF is a third generation P-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The DPAK is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Power dissipation levels up to 1.5W are possible in typical surface-mount applications.
● Dynamic dV/dt rating
● Repetitive avalanche rated
● Surface-mount
VISHAY
8 Pages / 1.48 MByte
Vishay Semiconductor
Trans MOSFET P-CH 100V 3.1A 3Pin(2+Tab) DPAK
Vishay Siliconix
MOSFET P-CH 100V 3.1A DPAK
Intersil
3.1A, 100V, 1.2Ω, P-Channel Power MOSFETs
Vishay Semiconductor
Trans MOSFET P-CH 100V 3.1A 3Pin(2+Tab) DPAK T/R
Vishay Semiconductor
MOSFET, Power; P-Ch; VDSS -100V; RDS(ON) 1.2Ω; ID -3.1A; TO-252AA; PD 25W; VGS +/-2
VISHAY
TO-252-3P-CH 100V 3.1A 1.2Ω
VISHAY
TO-252-3P-CH 100V 3.1A 1.2Ω
Vishay Siliconix
MOSFET P-CH 100V 3.1A DPAK
Vishay Siliconix
Trans MOSFET P-CH 100V 3.1A 3Pin(2+Tab) DPAK
International Rectifier
MOSFET P-CH 100V 3.1A DPAK
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.