| TYPE | DESCRIPTION |
|---|
| Number of Pins | 3 Pin |
| Case/Package | REEL |
| Polarity | P-Channel |
| Drain to Source Voltage (Vds) | 55V |
| Continuous Drain Current (Ids) | 31A |
| TYPE | DESCRIPTION |
|---|
| Packaging | Reel |
The IRFR5305TRPBF is a -55V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapour phase, infrared or wave soldering techniques.
● Ultra low on-resistance
● Advanced process technology
● Fully avalanche rated
Infineon
11 Pages / 0.23 MByte
Infineon
27 Pages / 0.31 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
6 Pages / 0.15 MByte
Infineon
1 Pages / 0.15 MByte
International Rectifier
Trans MOSFET P-CH 55V 31A 3Pin(2+Tab) DPAK
International Rectifier
MOSFET, Power; P-Ch; VDSS -55V; RDS(ON) 0.065Ω; ID -31A; D-Pak (TO-252AA); PD 110W
International Rectifier
MOSFET, Power; P-Ch; VDSS -55V; RDS(ON) 0.065Ω; ID -31A; D-Pak (TO-252AA); PD 110W
International Rectifier
Trans MOSFET P-CH 55V 31A 3Pin(2+Tab) DPAK T/R
International Rectifier
Trans MOSFET P-CH Si 55V 31A 3Pin(2+Tab) DPAK T/R
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