| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | REEL |
| Polarity | P-Channel |
| Drain to Source Voltage (Vds) | 55V |
| Continuous Drain Current (Ids) | 31A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
The IRFR5305PBF is a P-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. Fifth generation HEXFETs from International rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
● Dynamic dv/dt rating
● Fully avalanche rated
● Surface mount
● Advanced process technology
● ±20V Gate-source voltage
Infineon
11 Pages / 0.23 MByte
Infineon
27 Pages / 0.3 MByte
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2 Pages / 0.17 MByte
Infineon
6 Pages / 0.15 MByte
International Rectifier
Trans MOSFET P-CH 55V 31A 3Pin(2+Tab) DPAK
International Rectifier
MOSFET, Power; P-Ch; VDSS -55V; RDS(ON) 0.065Ω; ID -31A; D-Pak (TO-252AA); PD 110W
International Rectifier
MOSFET, Power; P-Ch; VDSS -55V; RDS(ON) 0.065Ω; ID -31A; D-Pak (TO-252AA); PD 110W
International Rectifier
Trans MOSFET P-CH 55V 31A 3Pin(2+Tab) DPAK T/R
International Rectifier
Trans MOSFET P-CH Si 55V 31A 3Pin(2+Tab) DPAK T/R
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