| TYPE | DESCRIPTION |
|---|
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 55V |
| Continuous Drain Current (Ids) | 71A |
The IRFR3505PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. It is designed for surface-mounting using vapour phase, infrared or wave soldering techniques. Power dissipation level up to 1.5W is possible in typical surface-mount applications.
● Advanced process technology
● Repetitive avalanche allowed up to Tjmax
● Dynamic dV/dt rating
● Fully avalanche rating
Infineon
11 Pages / 0.32 MByte
Infineon
6 Pages / 0.21 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
6 Pages / 0.25 MByte
International Rectifier
Trans MOSFET N-CH 55V 71A 3Pin(2+Tab) DPAK T/R
International Rectifier
Trans MOSFET N-CH 55V 71A 3Pin(2+Tab) DPAK Tube
International Rectifier
Trans MOSFET N-CH 55V 71A 3Pin(2+Tab) DPAK
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