TYPE | DESCRIPTION |
---|
Case/Package | REEL |
Polarity | N-CH |
Drain to Source Voltage (Vds) | 100V |
Continuous Drain Current (Ids) | 8.7A |
The IRFR120ZPBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
● Advanced process technology
● Repetitive avalanche allowed up to Tjmax
Infineon
11 Pages / 0.31 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Vishay Semiconductor
Trans MOSFET N-CH 100V 7.7A 3Pin(2+Tab) DPAK
Vishay Siliconix
MOSFET N-CH 100V 7.7A DPAK
International Rectifier
MOSFET N-CH 100V 7.7A DPAK
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.21Ω; ID 9.4A; D-Pak (TO-252AA); PD 48W
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.21Ω; ID 9.4A; D-Pak (TO-252AA); PD 48W
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