| TYPE | DESCRIPTION |
|---|
| Case/Package | REEL |
| Polarity | N-CH |
| Drain to Source Voltage (Vds) | 100V |
| Continuous Drain Current (Ids) | 9.4A |
The IRFR120NTRPBF is a HEXFET® fifth generation N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient device for use in a wide variety of applications. The package is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Power dissipation level of 1.5W is possible in a typical surface-mount application.
● Advanced process technology
● Fully avalanche rating
● Low static drain-to-source ON-resistance
● Dynamic dV/dt rating
Infineon
11 Pages / 0.38 MByte
Infineon
27 Pages / 0.31 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
1 Pages / 0.13 MByte
Vishay Semiconductor
Trans MOSFET N-CH 100V 7.7A 3Pin(2+Tab) DPAK
Vishay Siliconix
MOSFET N-CH 100V 7.7A DPAK
International Rectifier
MOSFET N-CH 100V 7.7A DPAK
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.21Ω; ID 9.4A; D-Pak (TO-252AA); PD 48W
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.21Ω; ID 9.4A; D-Pak (TO-252AA); PD 48W
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