| TYPE | DESCRIPTION |
|---|
| Case/Package | REEL |
| Polarity | N-CH |
| Drain to Source Voltage (Vds) | 55V |
| Continuous Drain Current (Ids) | 44A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
The IRFR1205TRPBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient device for use in a wide variety of applications. It is designed for surface-mounting using vapour phase, infrared or wave soldering techniques. Power dissipation level up to 1.5W is possible in typical surface-mount applications.
● Fully avalanche rating
● Low static drain-to-source ON-resistance
● Dynamic dV/dt rating
Infineon
11 Pages / 0.38 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
3 Pages / 0.06 MByte
Infineon
1 Pages / 0.13 MByte
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.027Ω; ID 44A; D-Pak (TO-252AA); PD 107W
International Rectifier
Trans MOSFET N-CH 55V 44A 3Pin(2+Tab) DPAK Tube
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.027Ω; ID 44A; D-Pak (TO-252AA); PD 107W
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