| TYPE | DESCRIPTION |
|---|
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 55V |
| Continuous Drain Current (Ids) | 17A |
| TYPE | DESCRIPTION |
|---|
| Packaging | Reel |
The IRFR024NTRPBF is a HEXFET® fifth generation N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient device for use in a wide variety of applications. The package is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Power dissipation level of 1.5W is possible in a typical surface-mount application.
● Advanced process technology
● Fully avalanche rating
● Low static drain-to-source ON-resistance
● Dynamic dV/dt rating
Infineon
11 Pages / 0.39 MByte
Infineon
27 Pages / 0.31 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
6 Pages / 0.15 MByte
Infineon
1 Pages / 0.13 MByte
Vishay Semiconductor
Trans MOSFET N-CH 60V 14A 3Pin(2+Tab) DPAK
International Rectifier
60V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International Rectifier
Trans MOSFET N-CH Si 55V 17A 3Pin(2+Tab) DPAK
Vishay Semiconductor
Trans MOSFET N-CH 60V 14A 3Pin(2+Tab) DPAK T/R
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.075Ω; ID 17A; D-Pak (TO-252AA); PD 45W
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.075Ω; ID 17A; D-Pak (TO-252AA); PD 45W
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