TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | -100 V |
Current Rating | -21.0 A |
Case/Package | TO-247-3 |
Polarity | P-Channel |
Power Dissipation | 125 W |
Drain to Source Voltage (Vds) | -100 V |
Breakdown Voltage (Drain to Source) | -100 V |
Continuous Drain Current (Ids) | -21.0 A |
Rise Time | 73.0 ns |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
The IRFP9140PBF is a -100V P-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance.
● Dynamic dV/dt rating
● Repetitive avalanche rated
● Easy to parallel
● Simple drive requirement
● Isolated central mounting hole
● Fast switching
● 175°C Operating temperature
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