| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | REEL |
| Polarity | P-Channel |
| Drain to Source Voltage (Vds) | 100V |
| Continuous Drain Current (Ids) | 23A |
The IRFP9140NPBF is a -100V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
● Advanced process technology
● Dynamic dV/dt rating
● Fully avalanche rated
● 175°C Operating temperature
Infineon
9 Pages / 0.23 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
1 Pages / 0.14 MByte
Vishay Semiconductor
Trans MOSFET P-CH 100V 21A 3Pin(3+Tab) TO-247AC
Vishay Siliconix
MOSFET P-CH 100V 21A TO-247AC
Samsung
100V, P-channel power MOSFET
Intersil
19A, 100V, 0.2Ω, P-Channel Power MOSFET
International Rectifier
MOSFET, Power; P-Ch; VDSS -100V; RDS(ON) 0.117Ω; ID -23A; TO-247AC; PD 140W; VGS +/-2
Vishay Semiconductor
MOSFET, Power; P-Ch; VDSS -100V; RDS(ON) 0.2Ω; ID -21A; TO-247AC; PD 180W; VGS +/-20V
VISHAY
TO-247-3P-CH 100V 21A 200mΩ
International Rectifier
MOSFET P-CH 100V 23A TO-247AC
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