| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 200V |
| Continuous Drain Current (Ids) | 94A |
The IRFP90N20DPBF is a 200V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
● Low gate to drain charge to reduce switching loss
● Fully characterized capacitance and avalanche SOA
Infineon
9 Pages / 0.16 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
3 Pages / 0.03 MByte
Infineon
1 Pages / 0.12 MByte
International Rectifier
MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 0.023Ω; ID 94A; TO-247AC; PD 580W; VGS +/-30V
International Rectifier
200V Single N-channel Hexfet Power Mosfet In A To-247ac Package
IRF
Power MOSFET(Vdss=200V, Rds(on)max=0.023Ω, Id=94A)
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