TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 500 V |
Current Rating | 14.0 A |
Case/Package | TO-247-3 |
Polarity | N-Channel |
Power Dissipation | 190 W |
Input Capacitance | 2.04 nF |
Gate Charge | 64.0 nC |
Drain to Source Voltage (Vds) | 500 V |
Breakdown Voltage (Drain to Source) | 500 V |
Continuous Drain Current (Ids) | 14.0 A |
Rise Time | 36.0 ns |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Not Recommended for New Design |
Packaging | Tube |
The IRFP450APBF is a 500V N-channel Power MOSFET with low gate charge Qg results in simple drive requirement. It operates at high frequency with hard switching application. Suitable for SMPS and high speed power switching.
● Improved gate, avalanche and dynamic dv/dt ruggedness
● Fully characterized capacitance and avalanche voltage and current
● Low RDS (ON)
VISHAY
9 Pages / 0.29 MByte
ST Microelectronics
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