| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 400 V |
| Current Rating | 16.0 A |
| Case/Package | TO-247-3 |
| Drain to Source Resistance (on) (Rds) | 300 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 190 W |
| Drain to Source Voltage (Vds) | 400 V |
| Breakdown Voltage (Drain to Source) | 400 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 16.0 A |
| Rise Time | 49.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The IRFP350PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package provides greater creepage distances between pins to meet the requirements of most safety specifications.
● Dynamic dV/dt rating
● Ease of paralleling
● Repetitive avalanche rated
● Isolated central mounting hole
● Simple drive requirements
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