| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 80V |
| Continuous Drain Current (Ids) | 170A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
The IRFP2907ZPBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
● Advanced process technology
● Repetitive avalanche allowed up to Tjmax
Infineon
9 Pages / 0.26 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
5 Pages / 0.05 MByte
Infineon
1 Pages / 0.12 MByte
IRF
HEXFET Power MOSFET Die in Wafer Form
International Rectifier
MOSFET, Power; N-Ch; VDSS 75V; RDS(ON) 4.5Milliohms; ID 209A; TO-247AC; PD 470W; -55de
International Rectifier
MOSFET, Power; N-Ch; VDSS 75V; RDS(ON) 4.5Milliohms; ID 170A; TO-247AC; PD 310W; -55de
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