| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 75V |
| Continuous Drain Current (Ids) | 209A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
The IRFP2907PBF is a 75V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
● 175°C Operating temperature
● Dynamic dV/dt rating
● Fully avalanche rated
Infineon
9 Pages / 0.21 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
3 Pages / 0.03 MByte
IRF
HEXFET Power MOSFET Die in Wafer Form
International Rectifier
MOSFET, Power; N-Ch; VDSS 75V; RDS(ON) 4.5Milliohms; ID 209A; TO-247AC; PD 470W; -55de
International Rectifier
MOSFET, Power; N-Ch; VDSS 75V; RDS(ON) 4.5Milliohms; ID 170A; TO-247AC; PD 310W; -55de
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