TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 200 V |
Current Rating | 30.0 A |
Case/Package | TO-247-3 |
Drain to Source Resistance (on) (Rds) | 85.0 mΩ |
Polarity | N-Channel |
Power Dissipation | 190 W |
Drain to Source Voltage (Vds) | 200 V |
Breakdown Voltage (Drain to Source) | 200 V |
Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
Continuous Drain Current (Ids) | 30.0 A |
Rise Time | 86.0 ns |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
The IRFP250PBF is a 200V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance.
● Dynamic dV/dt rating
● Repetitive avalanche rated
● Easy to parallel
● Simple drive requirement
● Isolated central mounting hole
VISHAY
9 Pages / 1.42 MByte
VISHAY
9 Pages / 1.42 MByte
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