IRFP250NPBF Datasheet PDF - Infineon

The IRFP250NPBF from International Rectifier is 200V single N channel HEXFET power MOSFET in TO-247AC package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, ease of Paralleling, rugged, fast switching, simple drive requirements and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.

● Drain to source voltage (Vds) of 200V

● Gate to source voltage of ±20V

● On resistance Rds(on) of 75mohm at Vgs 10V

● Power dissipation Pd of 214W at 25°C

● Continuous drain current Id of 30A at Vgs 10V and 25°C

● Operating junction temperature range from -55°C to 175°C