| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Voltage Rating (DC) | 200 V |
| Current Rating | 30.0 A |
| Case/Package | - |
| Drain to Source Resistance (on) (Rds) | 75.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 214 W |
| Part Family | IRFP250N |
| Drain to Source Voltage (Vds) | 200 V |
| Breakdown Voltage (Drain to Source) | 200 V (min) |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 30.0 A |
| Rise Time | 43.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
International Rectifier
8 Pages / 0.17 MByte
International Rectifier
9 Pages / 0.17 MByte
ST Microelectronics
MOSFET N-CH 200V 33A TO-247
IXYS Semiconductor
Trans MOSFET N-CH Si 200V 30A 3Pin(3+Tab) TO-247AD
International Rectifier
N-Channel MOSFET, Vdss = 200V, Rds = 0.085Ω, Id = 30A, TO-247AC
Vishay Semiconductor
Trans MOSFET N-CH 200V 30A 3Pin(3+Tab) TO-247AC
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N-channel power MOSFET, 200V, 30A
Fairchild
Trans MOSFET N-CH Si 200V 33A 3Pin(3+Tab) TO-247
Infineon
MOSFET N-CH 200V 33A TO-247
VISHAY
TO-247-3 N-CH 200V 30A 85mΩ
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 0.085Ω; ID 30A; TO-247AC; PD 190W; VGS +/-20V
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