| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 41.0 A |
| Case/Package | TO-247AC |
| Polarity | N-Channel |
| Power Dissipation | 230 W |
| Drain to Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Ids) | 41.0 A |
| Rise Time | 120 ns |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
The IRFP150PBF is a HEXFET® third generation N-channel Power MOSFET provide the designer with the best combination of fast switching, ruggedized device design and low ON-resistance. The package provides greater creepage distances between pins to meet the requirements of most safety specifications.
● Dynamic dV/dt rating
● Repetitive avalanche rating
● Isolated central mounting hole
● Fast switching
● Ease of paralleling
● Simple drive requirements
Vishay Semiconductor
9 Pages / 1.44 MByte
Vishay Semiconductor
9 Pages / 1.44 MByte
VISHAY
Trans MOSFET N-CH 100V 41A 3Pin(3+Tab) TO-247AC
International Rectifier
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Vishay Semiconductor
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Vishay Siliconix
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IXYS Semiconductor
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Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.055Ω; ID 41A; TO-247AC; PD 230W; VGS +/-20V
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.036Ω; ID 42A; TO-247AC; PD 160W; VGS +/-20V
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