| TYPE | DESCRIPTION |
|---|
| Number of Pins | 3 Pin |
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 55V |
| Continuous Drain Current (Ids) | 160A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
The IRFP1405PBF is a HEXFET® N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device.
● Advanced process technology
● Repetitive avalanche allowed up to Tjmax
Infineon
9 Pages / 0.25 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
3 Pages / 0.03 MByte
Infineon
1 Pages / 0.12 MByte
International Rectifier
MOSFET N-CH 55V 95A TO-247AC
International Rectifier
Trans MOSFET N-CH 55V 160A 3Pin(3+Tab) TO-247AC Tube
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