| TYPE | DESCRIPTION |
|---|
| Case/Package | REEL |
| Polarity | N-CH |
| Drain to Source Voltage (Vds) | 55V |
| Continuous Drain Current (Ids) | 110A |
The IRFP064NPBF is an International Rectifier utilizes advanced processing techniques to achieve extremely low on-resistant per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
● Dynamic dv/dt rating
● Fully avalanche rated
● Advanced process technology
● Ultra low on-resistance
● Fast switching
Infineon
9 Pages / 0.58 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
3 Pages / 0.03 MByte
Infineon
1 Pages / 0.12 MByte
Vishay Siliconix
MOSFET N-CH 60V 70A TO-247AC
Vishay Semiconductor
Trans MOSFET N-CH 60V 70A 3Pin(3+Tab) TO-247AC
International Rectifier
HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.009Ω, ID = 70A
IRF
Power MOSFET(Vdss=60V, Rds(on)=0.009Ω, Id=70*A)
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 0.009Ω; ID 70A; TO-247AC; PD 300W; VGS +/-20V
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.008Ω; ID 110A; TO-247AC; PD 200W; VGS +/-20V
Vishay Siliconix
MOSFET N-CH 60V 70A TO-247AC
International Rectifier
Trans MOSFET N-CH 60V 130A 3Pin(3+Tab) TO-247AC
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