| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Voltage Rating (DC) | 55.0 V |
| Current Rating | 98.0 A |
| Case/Package | TO-247 |
| Drain to Source Resistance (on) (Rds) | 8.00 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 200 W |
| Part Family | IRFP064N |
| Drain to Source Voltage (Vds) | 55.0 V |
| Breakdown Voltage (Drain to Source) | 55.0 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 110 A |
| Rise Time | 100 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
Benefits:
● RoHS Compliant
● Low RDS(on)
● Industry-leading quality
● Dynamic dv/dt Rating
● Fast Switching
● Fully Avalanche Rated
● 175°C Operating Temperature
Vishay Siliconix
MOSFET N-CH 60V 70A TO-247AC
Vishay Semiconductor
Trans MOSFET N-CH 60V 70A 3Pin(3+Tab) TO-247AC
International Rectifier
HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.009Ω, ID = 70A
IRF
Power MOSFET(Vdss=60V, Rds(on)=0.009Ω, Id=70*A)
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 0.009Ω; ID 70A; TO-247AC; PD 300W; VGS +/-20V
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.008Ω; ID 110A; TO-247AC; PD 200W; VGS +/-20V
Vishay Siliconix
MOSFET N-CH 60V 70A TO-247AC
International Rectifier
Trans MOSFET N-CH 60V 130A 3Pin(3+Tab) TO-247AC
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