| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 55V |
| Continuous Drain Current (Ids) | 81A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
The IRFP054NPBF is a HEXFET® fifth generation N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation.
● Advanced process technology
● Dynamic dV/dt rating
● Fast switching
● Fully avalanche rating
Infineon
9 Pages / 1.45 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
3 Pages / 0.03 MByte
Infineon
1 Pages / 0.12 MByte
International Rectifier
MOSFET N-CH 60V 70A TO-247AC
Vishay Siliconix
MOSFET N-CH 60V 70A TO-247AC
Vishay Semiconductor
Trans MOSFET N-CH 60V 70A 3Pin(3+Tab) TO-247AC
IRF
Power MOSFET(Vdss=60V, Rds(on)=0.014Ω, Id=70*A)
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.012Ω; ID 81A; TO-247AC; PD 170W; VGS +/-20V
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 0.014Ω; ID 70A; TO-247AC; PD 230W; VGS +/-20V
VISHAY
TO-247-3 N-CH 60V 70A 14mΩ
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