TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 60.0 V |
Current Rating | 2.70 A |
Case/Package | SOT-223 |
Polarity | N-Channel |
Power Dissipation | 3.10 W |
Drain to Source Voltage (Vds) | 60.0 V |
Breakdown Voltage (Drain to Source) | 60.0 V |
Continuous Drain Current (Ids) | 2.70 A |
Rise Time | 50.0 ns |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
The IRFL014PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heat sinking. Power dissipation of greater than 1.25W is possible in a typical surface-mount application.
● Dynamic dV/dt rating
● Ease of paralleling
● Simple drive requirements
● Surface-mount
VISHAY
9 Pages / 0.28 MByte
Vishay Siliconix
MOSFET N-CH 60V 2.7A SOT223
International Rectifier
Transistor NPN MOS IRFL014 INTERNATIONAL RECTIFIER RoHS Ampere=2.7V=60 SOT223
Vishay Semiconductor
Trans MOSFET N-CH 60V 2.7A 4Pin(3+Tab) SOT-223
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.16Ω; ID 1.9A; SOT-223; PD 2.1W; VGS +/-20V
Vishay Semiconductor
Trans MOSFET N-CH 60V 2.7A 4Pin(3+Tab) SOT-223 T/R
VISHAY
SOT-223-3 N-CH 60V 2.7A 200mΩ
Vishay Siliconix
MOSFET N-CH 60V 2.7A SOT223
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 0.2Ω; ID 2.7A; SOT-223; PD 3.1W; VGS +/-20V
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.