| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 600 V |
| Continuous Drain Current (Ids) | 5.50 A |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
The IRFIB6N60APBF is a 600V N-channel enhancement-mode Power MOSFET with single configuration. It is suitable for SMPS, uninterruptible power supply and high speed power switching applications.
VISHAY
8 Pages / 0.15 MByte
VISHAY
8 Pages / 0.15 MByte
VISHAY
Power MOSFET, N Channel, 5.5A, 600V, 750mohm, 10V, 4V
Vishay Semiconductor
VISHAY IRFIB6N60APBF Power MOSFET, N Channel, 5.5A, 600V, 750mohm, 10V, 4V
International Rectifier
Trans MOSFET N-CH 600V 5.5A 3Pin(3+Tab) TO-220
Vishay Siliconix
MOSFET N-CH 600V 5.5A TO220FP
Vishay Semiconductor
Trans MOSFET N-CH 600V 5.5A 3Pin(3+Tab) TO-220FP
International Rectifier
MOSFET N-CH 600V 5.5A TO220FP
Vishay Siliconix
MOSFET N-CH 600V 5.5A TO220FP
IRF
Power MOSFET(Vdss=600V, Rds(on)max=0.75Ω, Id=5.5A)
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