| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 500 V |
| Current Rating | 4.60 A |
| Case/Package | TO-220-3 Full Pack, Isolated Tab |
| Polarity | N-Channel |
| Power Dissipation | 40.0 W |
| Drain to Source Voltage (Vds) | 500 V |
| Breakdown Voltage (Drain to Source) | 500 V |
| Continuous Drain Current (Ids) | 4.60 A |
| Rise Time | 22.0 ns |
| Isolation Voltage | 2.50 kV |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
The IRFI840GPBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The FULLPAK eliminates the need for additional insulating hardware. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heat sink. The isolation is equivalent to using a 100 micron mica barrier with standard product. The FULLPAK is mounted to a heat sink using a single clip or by a single screw fixing.
● Isolated package
● 2.5kVRMS (t = 60s, f = 60Hz) High voltage isolation
● 4.8mm Sink to lead creepage distance
● Dynamic dV/dt rating
● Low thermal resistance
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