| TYPE | DESCRIPTION |
|---|
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 Full Pack, Isolated Tab |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 200 V |
| Continuous Drain Current (Ids) | 9.80 A |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
The IRFI640GPBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The FULLPAK eliminates the need for additional insulating hardware. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heat sink. The isolation is equivalent to using a 100 micron mica barrier with standard product. The FULLPAK is mounted to a heat sink using a single clip or by a single screw fixing.
● Isolated package
● 2.5kVRMS (t = 60s, f = 60Hz) High voltage isolation
● 4.8mm Sink to lead creepage distance
● Dynamic dV/dt rating
● Low thermal resistance
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 0.18Ω; ID 9.8A; TO-220 Full-Pak; PD 40W
Vishay Siliconix
MOSFET N-CH 200V 9.8A TO220FP
Vishay Siliconix
Trans MOSFET N-CH 200V 9.8A 3Pin(3+Tab) TO-220 Full-Pak
International Rectifier
MOSFET N-CH 200V 9.8A TO220FP
Vishay Semiconductor
Trans MOSFET N-CH 200V 9.8A 3Pin(3+Tab) TO-220FP
IRF
Power MOSFET(Vdss=200V, Rds(on)=0.18Ω, Id=9.8A)
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
