| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 320 mA |
| Case/Package | DIP |
| Polarity | N-Channel |
| Power Dissipation | 1.30 W |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Continuous Drain Current (Ids) | 320 mA |
| Rise Time | 23.0 ns |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
VISHAY
9 Pages / 1.15 MByte
Vishay Siliconix
MOSFET N-CH 600V 320mA 4-DIP
Vishay Semiconductor
MOSFET N-CH 600V 320mA 4-DIP
International Rectifier
600V Single N-Channel HEXFET Power MOSFET in a HEXDIP package
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 600V; RDS(ON) 4.4Ω; ID 0.32A; HD-1; PD 1W; VGS +/-20V; -55
VISHAY
MOSFET, Power; N-Ch; VDSS 600V; RDS(ON) 4.4Ω; ID 0.32A; HD-1; PD 1W; VGS +/-20V; -55
Vishay Siliconix
MOSFET N-CH 600V 320mA 4-DIP
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