| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | -100 V |
| Current Rating | -1.00 A |
| Case/Package | DIP |
| Polarity | P-Channel |
| Power Dissipation | 1.30 W |
| Drain to Source Voltage (Vds) | -100 V |
| Breakdown Voltage (Drain to Source) | -100 V |
| Continuous Drain Current (Ids) | -1.00 A |
| Rise Time | 29.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The IRFD9120PBF is a -100V P-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is a machine-insertable case style which can be stacked in multiple combinations on standard 0.1-inch pin centres. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1W.
VISHAY
9 Pages / 1.98 MByte
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