| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | -60.0 V |
| Current Rating | -1.60 A |
| Case/Package | DIP |
| Polarity | P-Channel |
| Power Dissipation | 1.30 W |
| Drain to Source Voltage (Vds) | -60.0 V |
| Breakdown Voltage (Drain to Source) | -60.0 V |
| Continuous Drain Current (Ids) | -1.60 A |
| Rise Time | 68.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The IRFD9024PBF is a -60V P-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is a machine-insertable case style which can be stacked in multiple combinations on standard 0.1-inch pin centres. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1W.
● Dynamic dV/dt rating
● Repetitive avalanche rated
● 175°C Operating temperature
● Easy to parallel
● Simple drive requirement
● For automatic insertion
● End stackable
VISHAY
9 Pages / 1.64 MByte
Vishay Siliconix
MOSFET P-CH 60V 1.6A 4-DIP
VISHAY
MOSFET P-CH 60V 1.6A 4-DIP
Vishay Semiconductor
MOSFET P-CH 60V 1.6A 4-DIP
International Rectifier
-60V Single P-Channel HEXFET Power MOSFET in a HEXDIP package
IRF
Power MOSFET(Vdss=-60V, Rds(on)=0.28Ω, Id=-1.6A)
Vishay Semiconductor
MOSFET, Power; P-Ch; VDSS -60V; RDS(ON) 0.28Ω; ID -1.6A; HD-1; PD 1.3W; VGS +/-20V
VISHAY
HVMDIP-4P-CH 60V 1.6A 280mΩ
Vishay Siliconix
MOSFET P-CH 60V 1.6A 4-DIP
International Rectifier
MOSFET P-CH 60V 1.6A 4-DIP
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
