| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | 400 V |
| Current Rating | 490 mA |
| Case/Package | DIP |
| Polarity | N-Channel |
| Power Dissipation | 1.30 W |
| Drain to Source Voltage (Vds) | 400 V |
| Breakdown Voltage (Drain to Source) | 400 V |
| Continuous Drain Current (Ids) | 490 mA |
| Rise Time | 14.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Listed by Manufacturer |
| Packaging | Bulk |
Description
●Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
●Isolated Package
●High Voltage Isolation = 2.5KVRMS
●Sink to Lead Creepage Dist. 4.8mm
●Logic-Level Gate Drive
●RDS(ON) Specified at VGS = 4V & 5V
●Fast Switching
●Ease of paralleling
International Rectifier
0.28 MByte
International Rectifier
8 Pages / 0.31 MByte
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