| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 1.00 A |
| Case/Package | DIP |
| Drain to Source Resistance (on) (Rds) | 540 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 1.30 W |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 1.00 A |
| Rise Time | 16.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
VISHAY
8 Pages / 1.73 MByte
Vishay Siliconix
MOSFET N-CH 100V 1A 4-DIP
Vishay Semiconductor
MOSFET N-CH 100V 1A 4-DIP
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1A, 100V, 0.6Ω, N-Channel Power MOSFET
VISHAY
MOSFET N-CH 100V 1A 4-DIP
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.54Ω; ID 1A; HD-1; PD 1.3W; VGS +/-20V; VF 2.
VISHAY
HVMDIP-4 N-CH 100V 1A 540mΩ
Vishay Siliconix
MOSFET N-CH 100V 1A 4-DIP
International Rectifier
MOSFET N-CH 100V 1A 4-DIP
Vishay Precision Group
MOSFET; Powr; N-Ch; VDSS 100V; RDS(ON) 0.54Ω; ID 1A; HD-1; PD 1.3W; VGS +/-20V; VF 2.5V
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