| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 1.00 kV |
| Current Rating | 3.10 A |
| Case/Package | TO-220-3 |
| Drain to Source Resistance (on) (Rds) | 5.00 kΩ |
| Polarity | N-Channel |
| Power Dissipation | 125 W |
| Drain to Source Voltage (Vds) | 1.00 kV |
| Breakdown Voltage (Drain to Source) | 1.00 kV |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 3.10 A |
| Rise Time | 25.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The IRFBG30PBF is a third generation N-channel Power MOSFET is designed with the combination of fast switching, low on-resistance and cost effectiveness.
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