IRFBC30 Datasheet PDF - ST Microelectronics

Manufacturer:	ST Microelectronics
Category:	MOSFETs
Description:	N - CHANNEL 600V - 1.8Ω - 3.6A - TO-220 PowerMESH]II MOSFET
Documentation:	IRFBC30 Datasheet
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

IRFBC30 Specifications

TYPE	DESCRIPTION
Drain to Source Resistance (on) (Rds)	2.20 Ω
Polarity	N-Channel
Power Dissipation	75.0 W
Breakdown Voltage (Drain to Source)	600 V
Breakdown Voltage (Gate to Source)	-20.0 V to 20.0 V
Continuous Drain Current (Ids)	3.60 A

ST Microelectronics

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