| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 9.20 A |
| Case/Package | TO-220-3 |
| Polarity | N-Channel |
| Power Dissipation | 170 W |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Continuous Drain Current (Ids) | 9.20 A |
| Rise Time | 25.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The IRFB9N60APBF is a 600V N-channel enhancement-mode Power MOSFET with single configuration. It is suitable for SMPS, uninterruptible power supply and high speed power switching applications.
● Low gate charge Qg results in simple drive requirement
● Improved gate, avalanche and dynamic dV/dt ruggedness
● Fully characterized capacitance and avalanche voltage and current
VISHAY
8 Pages / 0.12 MByte
IRF
Power MOSFET(Vdss=600V, Rds(on)=0.75Ω, Id=9.2A)
VISHAY
TO-220-3 N-CH 600V 9.2A 750mΩ
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 600V; RDS(ON) 0.75Ω; ID 9.2A; TO-220AB; PD 170W; VGS +/-30V
Vishay Semiconductor
Trans MOSFET N-CH 600V 9.2A 3Pin(3+Tab) TO-220AB
Vishay Siliconix
MOSFET N-CH 600V 9.2A TO-220AB
TI
MOSFET N-CH 600V 9.2A TO-220AB
Vishay Siliconix
MOSFET N-CH 600V 9.2A TO-220AB
International Rectifier
MOSFET N-CH 600V 9.2A TO-220AB
VISHAY
MOSFET N-CH 600V 9.2A TO-220AB
International Rectifier
MOSFET N-CH 600V 9.2A TO-220AB
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
