TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Case/Package | REEL |
Polarity | N-Channel |
Drain to Source Voltage (Vds) | 40V |
Continuous Drain Current (Ids) | 317A |
The IRFB7434PBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for battery powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications, DC-to-AC inverters, DC-to-DC and AC-to-DC converters.
● Fully characterized capacitance and avalanche SOA
● Enhanced body diode dV/dt and di/dt capability
Infineon
10 Pages / 0.25 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
2 Pages / 0.06 MByte
Infineon
MOSFET MOSFET, 40V, 195A, 1 216NC Qg, TO-220AB
International Rectifier
TO220/MOSFET, 40V, 195A, 1.6MOHM, 216NC QG
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