| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220AB |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 40V |
| Continuous Drain Current (Ids) | 409A |
The IRFB7430PBF is a 40V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. The StrongIRFET™ HEXFET® power MOSFET is suitable for battery powered circuits, synchronous rectifier applications, half-bridge and full-bridge topologies.
● Improved gate, avalanche and dynamic dv/dt ruggedness
● Fully characterized capacitance and avalanche SOA
● Enhanced body diode dV/dt and dI/dt capability
● Halogen-free
Infineon
10 Pages / 0.24 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
2 Pages / 0.06 MByte
International Rectifier
TO220/MOSFET, 40V, 195A, 1.3MOHM, 300NC QG
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