| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 59.0 A |
| Case/Package | REEL |
| Polarity | N-Channel |
| Power Dissipation | 200 W |
| Part Family | IRFB59N10D |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Continuous Drain Current (Ids) | 59.0 A |
| Rise Time | 90.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
The IRFB59N10DPBF is a HEXFET® single N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for high frequency DC-to-DC converters.
● Fully characterized capacitance including effective COSS to simplify design
● Fully characterized avalanche voltage and current
Infineon
12 Pages / 0.22 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
5 Pages / 0.04 MByte
Infineon
1 Pages / 0.14 MByte
IRF
Power MOSFET(Vdss=100V, Rds(on)max=0.025Ω, Id=59A)
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.025Ω; ID 59A; TO-220AB; PD 200W; VGS +/-30V
Vishay Semiconductor
MOSFET N-CH 100V 59A TO-220AB
International Rectifier
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
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