| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 150V |
| Continuous Drain Current (Ids) | 51A |
The IRFB52N15DPBF is a HEXFET® single N-channel Power MOSFET offers fully characterized capacitance including effective COSS to simplify design. It is suitable for high frequency DC-to-DC converters and plasma display panel.
● Fully characterized avalanche voltage and current
● Low gate-to-drain charge to reduce switching losses
Infineon
11 Pages / 0.31 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
2 Pages / 0.04 MByte
Infineon
1 Pages / 0.14 MByte
IRF
Power MOSFET(Vdss=150V, Rds(on)max=0.032Ω, Id=50A)
International Rectifier
MOSFET, Power; N-Ch; VDSS 150V; RDS(ON) 32Milliohms; ID 51A; TO-220AB; PD 230W; -55deg
International Rectifier
MOSFET N-CH 150V 51A TO-220AB
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