TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Case/Package | REEL |
Polarity | N-Channel |
Drain to Source Voltage (Vds) | 100V |
Continuous Drain Current (Ids) | 97A |
The IRFB4410ZPBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.
● Improved gate, avalanche and dynamic dv/dt ruggedness
● Fully characterized capacitance and avalanche SOA
● Enhanced body diode dV/dt and dI/dt capability
● Halogen-free
Infineon
12 Pages / 0.32 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
3 Pages / 0.09 MByte
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