| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 100V |
| Continuous Drain Current (Ids) | 127A |
The IRFB4310ZPBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.
● Improved gate, avalanche and dynamic dv/dt ruggedness
● Fully characterized capacitance and avalanche SOA
● Enhanced body diode dV/dt and dI/dt capability
Infineon
11 Pages / 0.31 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
3 Pages / 0.09 MByte
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 5.6 Milliohms; ID 130A; TO-220AB; PD 300W
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 4.8 Milliohms; ID 120A; TO-220AB; PD 250W
International Rectifier
MOSFET MOSFT 100V 127A 6mOhm 120NC Qg
International Rectifier
MOSFET N-CH 100V 130A TO-220AB
International Rectifier
MOSFET N-CH 100V 120A TO-220AB
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