| TYPE | DESCRIPTION |
|---|
| Case/Package | REEL |
| Polarity | N-CH |
| Drain to Source Voltage (Vds) | 100V |
| Continuous Drain Current (Ids) | 130A |
The IRFB4310PBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits.
● Fully characterized capacitance and avalanche SOA
● Enhanced body diode dV/dt and di/dt capability
Infineon
12 Pages / 0.36 MByte
Infineon
27 Pages / 0.31 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
1 Pages / 0.14 MByte
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 5.6 Milliohms; ID 130A; TO-220AB; PD 300W
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 4.8 Milliohms; ID 120A; TO-220AB; PD 250W
International Rectifier
MOSFET MOSFT 100V 127A 6mOhm 120NC Qg
International Rectifier
MOSFET N-CH 100V 130A TO-220AB
International Rectifier
MOSFET N-CH 100V 120A TO-220AB
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