| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 250V |
| Continuous Drain Current (Ids) | 46A |
The IRFB4229PBF is a HEXFET® single N-channel Power MOSFET designed for sustain, energy recovery and pass switch applications in plasma display panels. It utilizes the latest processing techniques to achieve low ON-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
● Advanced process technology
● Low Qg for fast response
● High repetitive peak current capability for reliable operation
● Short fall and rise times for fast switching
● Repetitive avalanche capability for robustness and reliability
Infineon
8 Pages / 0.28 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
International Rectifier
Trans MOSFET N-CH 250V 46A 3Pin(3+Tab) TO-220AB Tube
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