| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 200V |
| Continuous Drain Current (Ids) | 65A |
The IRFB4227PBF is a 200V single N-channel HEXFET® Power MOSFET PDP switch designed to sustain, energy recovery and pass switch applications for plasma display panels. By adapting the latest techniques it achieves low on-resistance per silicon area and EPULSE rating.
● 175°C Operating temperature
● Low QG for fast response
● High repetitive peak current capability for reliable operation
● Short fall and rise times for fast switching
● Repetitive avalanche capability for robustness and reliability
Infineon
8 Pages / 0.27 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
2 Pages / 0.09 MByte
International Rectifier
200V Single N-Channel HEXFET Power MOSFET PDP Switch in a TO-220AB package
International Rectifier
MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 19.7 Milliohms; ID 65A; TO-220AB; PD 330W
IFA
N-Channel 200V 24mΩ 70NC Flange Mount Hexfet Power Mosfet - TO-220AB
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