| TYPE | DESCRIPTION |
|---|
| Case/Package | REEL |
| Polarity | N-CH |
| Drain to Source Voltage (Vds) | 200V |
| Continuous Drain Current (Ids) | 38A |
The IRFB38N20DPBF is a HEXFET® single N-channel Power MOSFET offers fully characterized capacitance including effective COSS to simplify design. It is suitable for high frequency DC-to-DC converters and plasma display panel.
● Fully characterized avalanche voltage and current
● Low gate-to-drain charge to reduce switching losses
Infineon
11 Pages / 0.32 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
2 Pages / 0.04 MByte
Infineon
1 Pages / 0.14 MByte
International Rectifier
MOSFET N-CH 200V 43A TO-220AB
International Rectifier
MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 0.054Ω; ID 43A; TO-220AB; PD 300W; VGS +/-30V
IFA
N-Channel 200V 54mΩ 60NC Flange Mount Hexfet Power Mosfet - TO-220AB
IRF
Power MOSFET(Vdss=200V, Rds(on)max=0.054Ω, Id=44A)
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