| TYPE | DESCRIPTION |
|---|
| Case/Package | REEL |
| Polarity | N-CH |
| Drain to Source Voltage (Vds) | 75V |
| Continuous Drain Current (Ids) | 80A |
The IRFB3607PBF is a 75V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.
● Improved gate, avalanche and dynamic dv/dt ruggedness
● Fully characterized capacitance and avalanche SOA
● Enhanced body diode dV/dt and dI/dt capability
Infineon
11 Pages / 0.31 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
3 Pages / 0.09 MByte
International Rectifier
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International Rectifier
Trans MOSFET N-CH 75V 80A 3Pin(3+Tab) TO-220AB
International Rectifier
MOSFET N-CH 75V 80A TO220AB
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