| TYPE | DESCRIPTION |
|---|
| Case/Package | REEL |
| Polarity | N-CH |
| Drain to Source Voltage (Vds) | 75V |
| Continuous Drain Current (Ids) | 120A |
The IRFB3307ZPBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits.
● Fully characterized capacitance and avalanche SOA
● Enhanced body diode dV/dt and di/dt capability
Infineon
11 Pages / 0.3 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
5 Pages / 0.04 MByte
Infineon
1 Pages / 0.14 MByte
International Rectifier
MOSFET N-CH 75V 130A TO-220AB
International Rectifier
Trans MOSFET N-CH 75V 120A 3Pin(3+Tab) TO-220AB Tube
International Rectifier
Trans MOSFET N-CH 75V 120A 3Pin(3+Tab) TO-220AB Tube
International Rectifier
Trans MOSFET N-CH 75V 120A 3Pin(3+Tab) TO-220AB
International Rectifier
MOSFET N-CH 75V 120A TO-220AB
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