| TYPE | DESCRIPTION |
|---|
| Case/Package | REEL |
| Polarity | N-CH |
| Drain to Source Voltage (Vds) | 60V |
| Continuous Drain Current (Ids) | 210A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
The IRFB3206PBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits.
● Fully characterized capacitance and avalanche SOA
● Enhanced body diode dV/dt and di/dt capability
● Halogen-free
Infineon
12 Pages / 0.31 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
5 Pages / 0.04 MByte
Infineon
1 Pages / 0.14 MByte
International Rectifier
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
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Trans MOSFET N-CH 60V 210A 3Pin(3+Tab) TO-220AB Tube
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