| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 200V |
| Continuous Drain Current (Ids) | 31A |
The IRFB31N20DPBF is a 200V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
● Low gate to drain charge to reduce switching loss
● Fully characterized capacitance and avalanche SOA
● Surface mount
Infineon
12 Pages / 0.28 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
5 Pages / 0.04 MByte
Infineon
1 Pages / 0.14 MByte
IRF
Power MOSFET(Vdss=200V, Rds(on)max=0.082Ω, Id=31A)
International Rectifier
MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 0.082Ω; ID 31A; TO-220AB; PD 200W; VGS +/-30V
International Rectifier
Trans MOSFET N-CH 200V 31A 3Pin(3+Tab) TO-220AB
IFC
N-Channel 200V 0.082Ω 70NC Flange Mount Hexfet Power Mosfet - TO-220AB
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