| TYPE | DESCRIPTION |
|---|
| Case/Package | REEL |
| Polarity | N-CH |
| Drain to Source Voltage (Vds) | 200V |
| Continuous Drain Current (Ids) | 24A |
The IRFB23N20DPBF is a HEXFET® single N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for high frequency DC-to-DC converters.
● Fully characterized capacitance including effective COSS to simplify design
● Fully characterized avalanche voltage and current
Infineon
12 Pages / 0.27 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
5 Pages / 0.04 MByte
Infineon
1 Pages / 0.14 MByte
International Rectifier
MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 0.1Ω; ID 24A; TO-220AB; PD 170W; VGS +/-30V
IRF
Power MOSFET(Vdss=200V, Rds(on)max=0.1Ω, Id=24A)
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